Abstract
Near-1.3-μm lasers based on multiple layers (2, 5 and 10) of InAs/InGaAs/GaAs quantum dots with high performance have been grown by molecular beam epitaxy. A record differential efficiency as high as 88% was achieved in laser based on 10 QD layers. Threshold current density of 100–150 A/cm 2 and differential efficiency of 75–80% were achieved simultaneously in the same device. Characteristic temperature of 150 K in 20–50°C temperature range was demonstrated for the laser based on 5 QD layers. A steep increase in internal loss with decreasing cavity length was found to limit the highest mirror loss possible for ground state lasing.
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