InAs/GaSb short-period superlattice injection lasers operating in 2.5 [micro sign]m–3.5 [micro sign]m mid-infrared wavelength range

Abstract

Demonstrated is laser emission between 2.5 and 3.5 µm from broad-area laser diodes with active zones made of InAs/GaSb short-period superlattices confined by AlGaAsSb guiding and cladding layers. A record threshold-current density of 20 A/cm2 is achieved at 95 K and 2.6 µm. Lasing below 3 µm is achieved up to room temperature, while it is limited at 160 K for longer wavelength owing to low carrier confinement. This demonstrates the potential of this material system for mid-infrared laser applications and shows that it is even more agile than previously considered.