Abstract
We report here the first use of InAs/GaAs short-period strained-layer superlattices as Stark effect modulators. We have observed differential transmission changes as large as 38% with a corresponding change in quantum-well absorption of 0.28 μm−1 at an applied field of 43 kV/cm. The Kramers–Kronig relation predicts a maximum change in the quantum-well index of refraction of 0.019 for a field of 43 kV/cm. There is a unique light-hole feature in the absorption and electroabsorption spectra that is attributed to resonant tunneling in the presence of high internal strain in the InAs layers.
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