Abstract
We have investigated the intermixing effect of multilayer self-assembled InAs/GaAs quantum dots on photoluminescence (PL) spectra. Proton implantation combined with rapid thermal annealing is used to induce intermixing at the interface of InAs and GaAs. Intermixing results in a change of both the optical transition energy and the linewidth of the PL emission peaks. A blueshift up to 94.3 meV is obtained in the PL emission peaks. Our results show that proton implantation is an efficient method to tune the electronic states in self-assembled InAs/GaAs quantum dots.
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