Abstract
The potential benefit from the combination of the optoelectronic and electronicfunctionality of III–V semiconductors with silicon technology is one of the most desiredoutcomes to date. Here we have systematically investigated the optical properties ofInAs quantum structure embedded in GaAs grown on patterned sub-micron andnanosize holes on Si(001). III–V material tends to accumulate in the patternedsub-micron holes and a material depletion region is observed around holes whenGaAs/InAs/GaAs is deposited directly on patterned Si(001). By use of a 60 nmSiO2 layer and patterning sub-micron and nanosize holes through the oxide layer to thesubstrate, we demonstrate that high optical quality InAs nanostructures, both quantumdots and quantum wells, formed by a two-monolayer InAs layer embedded inGaAs can be epitaxially grown on Si(001). We also report the power-dependentand temperature-dependent photoluminescence spectra of these structures. Theresults show that hole diameter (sub-micron versus nanosize) has a strong effecton the structural and optical properties of GaAs/InAs/GaAs nanostructures.
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