Abstract

Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were subsequently utilized to produce planar InAs diodes. The Be implanted planar diodes had a superior dynamic resistance-area product and comparable dark current with n-i-p InAs mesa diodes when operated at low temperatures.

Highlights

  • I nAs is considered a key III–V semiconductor in the fields of high speed and optoelectronics due to its high electron mobility and large band offset at the InAs/AlSb heterojunction

  • The majority of reported InAs devices are mesa structures grown by molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE)

  • Complications associated with the diffusion techniques make it desirable to explore other doping methods; for example, when diffusing Zn into InAs, the high temperature environment necessitates an As overpressure to be maintained in the chamber to prevent the dissociation of As from the InAs

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Summary

InAs Diodes Fabricated Using Be Ion Implantation

Benjamin S. White, Ian C. Sandall, John P. R. David, Fellow, IEEE, and Chee Hing Tan, Member, IEEE Abstract— Be ion implantation and annealing conditions were optimized to demonstrate an effective method for selective area p-type doping in InAs. Optimized implantation and annealing conditions were subsequently utilized to produce planar InAs diodes. The Be implanted planar diodes had a superior dynamic resistance-area product and comparable dark current with n-i-p InAs mesa diodes when operated at low temperatures. Index Terms— Annealing, indium arsenide, ion implantation, photodiode.

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RESULTS AND DISCUSSION
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