Abstract
An InAs-channel heterostructure field-effect transistor on GaAs substrates is presented. The conduction channel was formed by the InAs/AlAs0.16Sb0.84/AlSb quantum well. With the addition of the AlAs0.16Sb0.84 layer, holes that are generated by impact ionisation at high voltages are effectively confined in the InAs channel because of the large ΔEv in this type-I heterostructure. By suppressing the hole injection into and accumulation in the buffer layer, the feedback through the back gate is eliminated and excellent output characteristics were obtained. The fabricated devices had a threshold voltage of about −0.6 V with a channel mobility of 18 100 cm2/V-s and a sheet carrier density of 1.2 × 1012 cm−2.
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