Abstract
A new class of avalanche photodiodes (APD) characterized by exclusive electron impact ionization and known as electron avalanche photodiodes (e-APD), have received considerable attention recently due to their ideal gain and excess noise characteristics. HgCdTe, the first material system in which exclusive electron impact ionization was demonstrated, has been the subject of substantial research and development for applications requiring mid and long wavelength infrared photodetectors with high sensitivity, including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. More recently, InAs has also been shown to demonstrate exclusive electron impact ionization and has subsequently come under intense study. Although InAs APD's have not yet reached the multiplication gains achievable in HgCdTe, the advantages inherent to III–V materials, including mature device fabrication and improved compositional uniformity, make InAs APD's particularly attractive for mid-infrared focal plane arrays (FPA). Here, we report a significant, ∼5x, increase in the room temperature multiplication gain for InAs APD's, as compared to the state-of-the-art at 10 V reverse bias.
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