Abstract
We describe an atomic force microscope (AFM) oxidation process as a nanoscale fabrication method that is particularly useful for InAs/(Al)GaSb heterostructures. The fabrication is carried out by oxidizing the GaSb surface layer and is followed by water immersion, which selectively removes the oxidized GaSb. We show that an improvement in the shape of the fabricated structure is achieved by using a thin GaSb surface layer. We fabricated preliminary wire-geometry devices with an 0.2 μm period corrugated surface made by the AFM oxidation process. Magnetotransport measurements performed at 4.2 K imply that the modification in the two-dimensional electron gas concentration corresponding to the corrugation is achieved in addition to the increase in the average electron concentration.
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