Abstract
Heterostructures for InAs-channel high-electron-mobility transistors (HEMTs) were investigated. Reactive AlSb buffer and barrier layers were replaced by more stable Al0.7Ga0.3Sb and In0.2Al0.8Sb alloys. The distance between the gate and the channel was reduced to 7–13 nm to allow good aspect ratios for very short gate lengths. In addition, n+-InAs caps were successfully deposited on the In0.2Al0.8Sb upper barrier allowing for low sheet resistance with relatively low sheet carrier density in the channel. These advances are expected to result in InAs-channel HEMTs with enhanced microwave performance and better reliability.
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