Abstract
Due to the great potential applications in high-frequency and high-power solid state microwave electronic device, GaN-based high electron mobility transistors (HEMTs) have attracted much attention in the past two decades, and tremendous progress has been achieved toward realizing the commercialization in the market. To further improve the device performance, especially for high operation frequency and device reliability under high voltage, advanced materials and device fabrication process, novel device structures and design are proposed. Among the proposed approaches, InAlN-based lattice-matched heterostructures may become the preferred material for the next HEMT owing to its unique superior material properties. In this paper, in combination with the relative research work in the eld of group-Ⅲ compound semiconductor materials and devices, we present a brief review on the progress in growth of state of the art of InAlN-based heterostructures semiconductor materials. Based on the analysis of epitaxial growth of InAlN-based heterostructures, we discuss the advantages and achievements of proposed pulsed (surface reaction-enhanced) metal organic chemical vapor deposition (MOCVD) for InAlN/GaN heterostructures epitaxy.
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