Abstract
We report on the electron transport properties of two-dimensional electron gas confined in a quaternary barrier InAlGaN/AlN/GaN heterostructure down to cryogenic temperatures for the first time. A state-of-the-art electron mobility of 7340 cm2·V−1·s−1 combined with a sheet carrier density of 1.93 × 1013 cm−2 leading to a remarkably low sheet resistance of 44 Ω/□ are measured at 4 K. A strong improvement of Direct current (DC) and Radio frequency (RF) characteristics is observed at low temperatures. The excellent current and power gain cutoff frequencies (fT/fmax) of 65/180 GHz and 95/265 GHz at room temperature and 77 K, respectively, using a 0.12 μm technology confirmed the outstanding 2DEG properties.
Highlights
Al(In)GaN/GaN-based high-electron-mobility transistors (HEMTs) have shown great promise for high frequency and high power microwave applications owing to their highly conductive two dimensional electron gas (2DEG) combined with a high breakdown field
Cryogenic temperature Hall effect measurements were assessed in a vacuum chamber by using a a helium gas closed‐cycle cryostat and Lakeshore 776HMS measurement system
At liquid helium temperature (4 K), a state-of-the-art mobility of cm combined with a sheet carrier density of 1.93 × 1013 cm−2 was measured, resulting in a remarkably low combined with a sheet carrier density of 1.93 ˆ 1013 cm2 was measured, resulting in a remarkably low sheet resistance of 44 Ω/□
Summary
Al(In)GaN/GaN-based high-electron-mobility transistors (HEMTs) have shown great promise for high frequency and high power microwave applications owing to their highly conductive two dimensional electron gas (2DEG) combined with a high breakdown field. Heterostructure HEMTs with a sub-10-nm ultrathin quaternary barrier with a state-of-the-art electron mobility of 1800 cm2 ̈ V1 ̈ s1 and a sheet carrier density of 1.9 ˆ 1013 cm2 at room temperature [11]. Sheet carrier density and sheet resistance of the HEMT structure over the 4–
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