Abstract
Single junction In0.52Al0.48As solar cells have been grown on a (100) GaAs substrate by employing a 1 μm thick compositionally graded InxGa1−xAs/InP metamorphic buffer layer to accommodate the 3.9% mismatch. Cells processed from the 0.8 μm thick InAlAs layers had photovoltaic conversion efficiency of 5% with an open circuit voltage of 0.72 V, short-circuit current density of 9.3 mA/cm2, and a fill factor of 74.5% under standard air mass 1.5 illumination. The threading dislocation density was estimated to be 3 × 108 cm−2.
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