Abstract
We report on the applicability of a fully non-gaseous source (ngs) configuration for MOVPE growth of InAlAs/InGaAs/InP heterostructures. The ngs configuration is based on TBAs/TBP/ TMAs as group-V precursors and DitBuSi/CBr 4 as dopant sources. Conventional group-III metalorganics and nitrogen-carrier gas are used. InAlAs/InGaAs RTD layer structures combined with carbon-doped InP/InGaAs HBT layers are characterized in detail by HRXRD measurements and simulations. The InAlAs layers exhibit n-type background concentration of n=1.5×10 16 cm −3, N=1.7×10 17 cm −3 determined by Hall and CV-measurements, respectively. Abrupt InAlAs/InGaAs heterojunction interfaces are deduced from the X-ray characterization. Fabricated RTDs exhibit a high peak current density of S p>1×10 5 A/cm 2 and a highly symmetric I– V characteristics. The RTD/HBT combination devices exhibit state-of-the-art device performance like a DC-current gain of B>1 0 0 and a transit frequency of f T=39 GHz.
Published Version
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