Abstract
A simple potential mapping is used to show that tunneling through a single barrier, as in Schottky-barrier tunneling or source-to-drain tunneling in MOSFETs, cannot give rise to subthreshold swings below the thermionic limit (60 mV/decade at room temperature). While cognizant of the difficulty of proving a negative, it is thus highly unlikely that Schottky-barrier tunneling alone can result in reported instances of subthreshold swings that are less than 60 mV/decade.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
