α-In2Se3/MoS2 Ferroelectric Tunnel Junctions Based on van der Waals Heterostructures

Abstract

Ferroelectric tunnel junction is a promising candidate for emerging memory devices owing to its low-power consumption, nonvolatility and non-destructive read-out. A ferroelectric tunnel junction is a two-terminal device consisting of an ultra-thin ferroelectric layer sandwiched between two metal electrodes, and the tunnelling barrier can be modified by the ferroelectric polarization reversal, resulting in its tunnelling electroresistance (TER). Here, we demonstrate ferroelectric tunnel junctions that use α-In2Se3 as the ferroelectric barrier, and MoS2 and Ti/Au as asymmetric contacts. The tunnelling barrier can be modified effectively by the reversal of α-In2Se3 ferroelectric polarization, which results in a TER greater than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> at room temperature. Our results suggest that Van der Waals α-In2Se3/MoS2 ferroelectric tunnel junctions can be a suitable candidate for the future memory applications.