Abstract
In2S3 atomic layer deposition (ALD) with indium acetylacetonate (In(acac)3) and H2S was studied with quartz crystal microbalance (QCM), X-ray reflectivity (XRR), and Fourier transform infrared (FTIR) spectroscopy techniques. Subsequent In2S3 ALD on TiO2 nanotube arrays defined a model semiconductor sensitized solar cell. For In2S3 ALD on initial Al2O3 ALD surfaces, the In2S3 ALD displayed a nucleation period of ∼60−70 cycles followed by a linear growth region. These results were obtained under ALD conditions that were not completely self-limiting for the In(acac)3 exposure because of the low In(acac)3 vapor pressure. The growth per cycle decreased at higher temperature over the temperature range from 130 to 170 °C at these same reactant conditions. The growth per cycle was 0.30−0.35 A per cycle at 150 °C as determined by QCM and XRR measurements at higher In(acac)3 exposures where the surface reactions were self-limiting chemistry versus In(acac)3 and H2S exposures. The FTIR examinations revealed that the...
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