Abstract
Using well-calibrated electro-thermal simulations, the impact of self-heating on distortion parameters such as second-order harmonic distortion (HD2) and third-order harmonic distortion (HD3) characteristics has been investigated in this work. The presence of the self-heating effect degrades the RF characteristics of InGaAs nanosheet FETs. The influence of TA on distortion parameters is also examined by altering the ambient temperature (TA) from 300K to 360K. Our simulation anticipates a shift in distortion performance of InGaAs nanosheet FETs by increasing HD2 and HD3 by 25% and 4%, respectively, for a temperature increase of 60K above room temperature. With the introduction of highly thermally conducting buried oxide materials, the change in distortion performance of the InGaAs nanosheet MOSFET has also been observed with the rise in the minima of HD2 and HD3.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
