Abstract
A novel In0.53Ga0.47As/InP heterostructure trench-gate power MOSFET employing impact ionization at the hetero junction of n− In0.53Ga0.47As drift region and n+InP drain region has been proposed. The impact ionization supports the band-to-band tunneling at heterojunction, which further increases the drain current. It results in reduced ON-state resistance and improved transconductance without compromising with the breakdown voltage as compared with the conventional silicon trench-gate MOSFET (CTGMOS). Using 2-D numerical simulations, we demonstrate that the proposed device exhibits ~440% improvement in peak transconductance, ~92% reduction in on-state resistance, ~ 10% increase in breakdown voltage, ~16% increase in switching speed, and ~93% improvement in figure of Merit ( ${\text {R}}_{\textsf {ON}}$ . ${\text{Q}}_{\textsf {GD}})$ as compared with CTGMOS.
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