Abstract
We carry out an In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As single photon avalanche diode which exhibits a single photon detection efficiency exceeding 60% at 1310 nm and neat temporal characteristic of 65 ps. A novel concept of dual multiplication layer is incorporated to avoid the tradeoff between dark count rate, afterpulsing and timing jitter, paving the possibility to improve the overall performance of a single photon detector. Based on this elevated device structure, we further optimize the detection efficiency and timing jitter by employing a delicate mesa structure to better confine the electric field distribution within the central multiplication region. For our detector operated under gated mode, a shorten gate width together with an increase of excess bias percentage leads to a significant improvement in the detection performance. We eventually achieve a single photon detection efficiency of 61.4% without the involvement of afterpulsing at the gating frequency of 10 kHz for 200 K.
Highlights
S INCE single photon detector (SPD) offers the ultimate sensitivity, it facilitates the fast development of quantum information technologies [1]
For T = 225 K and 300 K, the afterpulsing probability increases slightly for the excess bias increasing from 9.3% to 10.5% (SPDE from 27% to 61%)
The single photon detection efficiency (SPDE) in the legend is referred to the data measured at 200 K
Summary
S INCE single photon detector (SPD) offers the ultimate sensitivity, it facilitates the fast development of quantum information technologies [1]. By combining the above improvement in fabrication and gate operation, we achieve SPDE as high as 61.4%, which is, to our knowledge, the best among the reported In0.53Ga0.47As/In0.52Al0.48As SPADs at 1310 nm and comparable to the reported In0.53Ga0.47As/InP SPADs at 1550 nm for the same thickness of 2-μm InGaAs absorption layer. Such high SPDE is obtained at the cost of relatively high DCR performance. Based on our current structure with high responsivity (larger than 1 A/W), the applications using time-gated strategy is ambitiously envisioned for that the synchronization of the gated signal of SPAD with incoming single-photon data stream can mitigate the problem of high DCR in our device [24]
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