Abstract
Metal-organic chemical vapour deposition (MOCVD) 법으로 성장된 <TEX>$In_{0.49}Ga_{0.51}P$</TEX>/GaAs 이종접합 구조의 특성을 표면 광전압(surface photovoltage; SPV) 분광법으로 조사하였다. SPV 측정은 입사광의 세기, 변조 주파수, 온도의 함수로 수행하였다. 상온에서 시료의 띠간격 에너지(band gap energy)는 GaAs와 <TEX>$In_{0.49}Ga_{0.51}P$</TEX>는 각각 1.400 및 1.893 eV이었다. 광세기를 증가시킴에 따라 SPV 크기는 증가하는 반면에, 변조 주파수를 증가시킴에 따라 SPV 크기는 감소하였다. 그리고 SPV 스펙트럼의 온도 의존성으로부터 GaAs와 <TEX>$In_{0.49}Ga_{0.51}P$</TEX>의 띠간격 에너지의 변화를 Varshni 및 Bose-Einstein 표현에 의해 분석하였다. We report the surface photovoltage (SPV) properties of <TEX>$In_{0.49}Ga_{0.51}P$</TEX>/GaAs heterostructure grown by metal-organic chemical vapour deposition (MOCVD). The SPV measurements were studied as a function of modulation beam intensity, modulation frequency and temperature. From a line shape analysis of room temperature derivative surface photovoltage (DSPV) spectrum, the band gap energies for GaAs and <TEX>$In_{0.49}Ga_{0.51}P$</TEX> transitions were 1.400 and 1.893 eV respectively. The surface photovoltage (SPV) increases with increasing the light intensity and temperature, whereas the SPV decreases with increasing the modulation frequency. From the temperature variation of the energy gaps, we have analysis by both Varshni and Bose-Einstein type expressions.
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