Abstract
The growth of In x Ga1−x N films (x = 0⋅1 and x = 0⋅2) on a thin gold layer (Au/SiO2) by chemical vapour deposition (CVD) at 650 ∘C is reported. As a novelty, the use of a Ga–In metallic alloy to improve the indium incorporation in the In x Ga1−x N is proposed. The results of high quality In x Ga1−x N films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the In x Ga1−x N and GaN films is shown as a function of the indium incorporation. The highest crystalline In x Ga1−x N films structure was obtained with an indium composition of x = 0⋅20. Also, the preferential growth on the (002) plane over In0⋅2 Ga0⋅8 N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the In x Ga1−x N films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 ∘C. The TL intensity was found to depend on composition being higher for x = 0⋅1 and increases as radiation dose increases.
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