Abstract
The (In x Ga1− x )2O3 photodetectors were fabricated on the single-crystalline (In x Ga1− x )2O3 films deposited on sapphire substrate by pulsed laser deposition. The structural and optical properties of the epilayers were investigated using high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and transmittance spectra. With decreasing the growth temperature, the indium composition increased and the bandgap decreased from 4.99 eV to 4.89 eV (In0.05 Ga0.95)2O3 and 4.78 eV (In0.08Ga0.92)2O 3. Furthermore, the photoelectrical characteristics of (In x Ga1− x )2O3 detectors were also studied. The enhanced $I_{{\text{photo}}}$ , $I_{{\text{dark}}}$ , and responsivity R were achieved in the devices with higher In composition, while a larger number of defects were introduced, resulting in the significant persistent photoconductivity.
Highlights
Ga2O3 has attracted great attention for high power electronic and ultraviolet (UV) or deep-ultraviolet (DUV) applications because of its exceptional properties, such as large bandgap (E G), high theoretical breakdown electric field and physical and chemical stabilities, etc. [1]–[5]
The properties of the (InxGa1−x)2O3 epilayers were investigated by High resolution X-ray diffraction (HRXRD), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry
3.1 Material Characterization The structural properties of the samples were investigated by HRXRD using CuKα radiation at room temperature
Summary
Ga2O3 has attracted great attention for high power electronic and ultraviolet (UV) or deep-ultraviolet (DUV) applications because of its exceptional properties, such as large bandgap (E G), high theoretical breakdown electric field and physical and chemical stabilities, etc. [1]–[5]. Β-Ga2O3 photodetectors have been fabricated and characterized with the cutoff wavelength around 250 nm [6]–[8]. A few studies have been carried out on the growth of (InxGa1−x)2O3 epilayers and the fabrication of (InxGa1−x)2O3 photodetectors [11], [13]. Compared with Ga2O3 photodetectors, the cutoff wavelength of (InxGa1−x)2O3 devices could be tuned from 253 nm(x = 0) to 335 nm (x = 1), which may be widely used in military and civil applications, such as flame detection, early missile threat warning. The better performance has been achieved in (InxGa1−x)2O3 photodetectors, including photocurrent and responsivity, the cutoff wavelength only changes from 249 nm(Ga2O3 on sapphire substrate) to 254 nm (x = 0.05) and 260 nm(x = 0.08)
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
