Abstract
We report an in-well and barrier coupling pump scheme of semiconductor disk laser (SDL). An in-well-absorbed (940 nm) and a barrier-absorbed (808 nm) pump source were used to measure laser output characteristics. The output power of the coupling pump can be significantly improved compared to the in-well pump only scheme under similar thermal load conditions. The power scaling of the coupling pump SDL is caused by the interaction dynamics of the photoexcited carrier between quantum-well and barrier. The results are discussed with a rate equation model that considers the injected into the quantum-well carrier and the barrier carrier in the active region.
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