Abstract
In-Sn-Zn oxide (ITZO) nanocomposite films have been investigated extensively as a potential material in thin-film transistors due to their good electrical properties. In this work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the duty cycle (pulse off-time) on the microstructures and electrical performance of the films was investigated. The results showed that ITZO thin films prepared by HiPIMS were dense and smooth compared to thin films prepared by direct-current magnetron sputtering (DCMS). With the pulse off-time increasing from 0 μs (DCMS) to 2000 μs, the films’ crystallinity enhanced. When the pulse off-time was longer than 1000 μs, In2O3 structure could be detected in the films. The films’ electrical resistivity reduced as the pulse off-time extended. Most notably, the optimal resistivity of as low as 4.07 × 10−3 Ω·cm could be achieved when the pulse off-time was 2000 μs. Its corresponding carrier mobility and carrier concentration were 12.88 cm2V−1s−1 and 1.25 × 1020 cm−3, respectively.
Highlights
Si-based thin-film transistors (TFTs) are widely used in liquid crystal displays, sensors, logic integrated circuits, etc. [1,2,3]
ITZO thin films with a thickness of 100 nm were deposited through high-power impulse magnetron sputtering (HiPIMS) technology on glass and silicon substrates from an ITZO target (99.9% purity, In2O3:SnO2:ZnO = 30:35:35 at.%, Φ = 76.2 mm) at room temperature
[30]: In this work, ITZO thin films were deposited on glass substrates at room temperature
Summary
Si-based thin-film transistors (TFTs) are widely used in liquid crystal displays, sensors, logic integrated circuits, etc. [1,2,3]. Amorphous oxide semiconductors can be fabricated at room temperature [4,5,6] Such materials combine good light transmittance and conductivity. ITZO-based TFTs have high potential for the development of generation displays due to their good etching-resistance during the back-channel-etching process. Magnetron sputtering has attracted much attention due to its low deposition temperature, fast sputtering speed, uniform film formation, and good repeatability [19,20,21]. Due to the high instantaneous power density applied on the target, the energy of the incident species to the substrate is effectively increased, resulting in the formation of a denser and more uniform film, thereby reducing the carrier scattering and enhancing the carrier mobility [27,28]. The optoelectronic properties of ITZO films prepared by HiPIMS technology under different duty cycles were investigated
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