In–Sn–Cu co-doped yttrium iron garnet ferrite: Magnetic and dielectric properties

Abstract

With the miniaturization and integration of electronic components, there has been widespread attention on yttrium iron garnet ferrite (YIG) with high saturation magnetization, high dielectric constant, and low ferromagnetic resonance linewidth. In this work, In–Sn–Cu co-doped YIG ferrite with the chemical formula Y3Fe4.8-xCu0.1Sn0.1InxO12 (x = 0.05, 0.10, 0.20, 0.30) was prepared. The properties of the samples, including their microstructure, crystal structure, magnetic attributes, and dielectric properties, were adjusted through the regulation of the indium doping levels. The microscopic and crystal structures confirm the effective doping of ions in YIG, resulting in an expansion of the lattice parameters. Both the saturation magnetization (Ms) and the ferromagnetic resonance linewidth (ΔH) are influenced by the level of doping. The maximum value of Ms is observed at x = 0.10 (30.86 emu/g), whereas the minimum value of ΔH occurs at x = 0.20 (35 Oe). Additionally, increasing doping concentration also leads to an upward trend in both resistivity and dielectric constant, with the lowest dielectric loss occurring at x = 0.15. This study will provide an effective approach for developing high-performance YIG ferrite that meets the requirements of miniaturization and integration.