Abstract
Indium nitride (InN) exists in two different structural phases, the equilibrium wurtzite (w) and the metastable zinc-blende (zb) phases. It is of scientific interest and practical relevance to examine the crystal structure of the epifilms during growth. In this paper, we use Patterson function inversion of low-energy electron diffraction I-V curves to reveal the preferential formation of zinc-blende InN wetting layer during the Stranski-Krastanov growth on GaN(0001). For three-dimensional islands nucleated afterwards on top of the wetting layer and for thick InN films, the equilibrium wurtzite structure is observed instead. This in situ revelation of the InN lattice structure is confirmed by ex situ transmission electron microscopy studies. Finally, the formation of zb-InN layer on w-GaN is explained in terms of the strain in the system.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.