Abstract
The formation of CuInS 2–CuInSe 2 alloy films from chalcogenisation of different precursors is investigated by in situ energy dispersive X-ray diffraction. A sequential synthesis procedure was used. Copper and indium (Cu/In=1.8) were sputtered on molybdenum coated soda-lime glass and selenium was introduced as a layer of elemental selenium or as a In 2Se 3 layer. Such prepared precursor films were then sulfurized in elemental sulfur vapor. The effects of the selenium precursors and the influence of sulfurization conditions on the resulting absorber films composition and properties were investigated. It is shown that the ternary phases in the final film were CuInS 2, CuIn(Se,S) 2, and CuInSe 2 in the case of elemental Se precursor deposition and CuInS 2, CuIn(Se,S) 2 in the case of In 2Se 3 precursors. The differences in the formation path ways are investigated in detail.
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