Abstract
GaSb(0 0 1) was treated with (NH 4) 2S x and the evolution of the interfacial chemistry was investigated, in situ, with monochromatic X-ray photoelectron spectroscopy (XPS), following heat treatment and exposure to trimethylaluminum (TMA) and deionized water (DIW) in an atomic layer deposition reactor. Elemental Sb (Sb–Sb bonding) as well as Sb 3+ and Sb 5+ chemical states were initially observed at the native oxide/GaSb interface, yet these diminished below the XPS detection limit after heating to 300 °C. No evidence of Ga–Ga bonding was observed whereas the Ga 1+/Ga–S chemical state was robust and persisted after heat treatment and exposure to TMA/DIW at 300 °C.
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