Abstract
AbstractWe developed a real‐time in‐situ X‐ray (RIX) diffraction technique for the detailed layer characterisation during epitaxial deposition of ZnSe‐based alloys on (001)GaAs substrates. A conventional molecular beam epitaxy chamber was equipped with a Cu X‐ray tube. The 113 reflection of the deposited structure is detected in static geometry by a CCD and is immediately analyzed in terms of strain, composition, thickness and strain relaxation behavior of the deposited layer. The in‐situ monitoring of ZnCdSe layers reveals a delay of heteroepitaxial growth start on GaAs, a gradual layer degradation due to dislocation formation, and a critical thickness for plastic relaxation which depends on the Cd content, consistent with an energy‐balance model. ZnCrSe alloy layers can be deposited with Cr content up to 2% at low substrate temperature TS = 210 °C. The layers appear to be epitaxial alloys with good quality, but a broadening of the Bragg peaks without a significant plastic relaxation is observed. Epitaxial growth and layer properties are studied as function of deposition conditions. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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