Abstract
Non-reciprocal transport, where the left to right flowing current differs from the right to left flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a non-centrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density, however, in-situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hBN layer. Tuning the carrier density allows a more than \SI{400}{\percent} variation of the non-reciprocal response. Our study serves as a milestone on how a few-atomic-layer-thin van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.
Highlights
Tuning the carrier density of nanostructures is essential for various applications and the exploration of exotic scientific phenomena
We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer
Tuning of the carrier density is typically achieved by gate electrodes, which are separated from the nanostructure by an insulating layer
Summary
Tuning the carrier density of nanostructures is essential for various applications and the exploration of exotic scientific phenomena It lies at the heart of the operation of field effect transistors, it allows the implementation of electron optical elements in graphene [1,2,3,4], and it affects valley excitons in two-dimensional (2D) materials [5], spin relaxation [6], or the exchange coupling in spintronic devices [7]. SOI in different materials, we estimate that the displacement field due to the polar crystal structure is orders of magnitude stronger than what the IL gate can generate
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