Abstract

The mechanism responsible for deformation-induced crystalline-to-amorphous transition (CAT) in silicon is still under considerable debate, owing to the absence of direct experimental evidence. Here we have devised a novel core/shell configuration to impose confinement on the sample to circumvent early cracking during uniaxial compression of submicron-sized Si pillars. This has enabled large plastic deformation and in situ monitoring of the CAT process inside a transmission electron microscope. We demonstrate that diamond cubic Si transforms into amorphous silicon through slip-mediated generation and storage of stacking faults (SFs), without involving any intermediate crystalline phases. By employing density functional theory simulations, we find that energetically unfavorable single-layer SFs create very strong antibonding interactions, which trigger the subsequent structural rearrangements. Our findings thus resolve the interrelationship between plastic deformation and amorphization in silicon, and shed light on the mechanism underlying deformation-induced CAT in general. Sharper insights into stress-induced, crystalline-to-amorphous transitions in silicon can be realized with crack-resistant micropillars. Mechanical processes such as polishing during the manufacture of photovoltaic cell alter silicon's crystal structure and degrade device performance. Wei Zhang and Zhi-Wei Shan from Xi'an Jiaotong University in China and co-workers have now used high-resolution transmission electron microscopy to capture in situ images of these transitions in progress. The team designed a system of submicrometre pillars consisting of a crystalline silicon core encased in a nanoscale shell of amorphous silicon. The flexible shell helped prevent brittle fracture from occurring while the pillars were gradually compressed into mushroom shapes by an indentation tool. Real-time imaging revealed that mechanical force deformed the silicon framework through plastic motions only – a finding that upsets previous concepts of intermediate crystalline phases taking part in the amorphization process. A novel and effective crystalline-Si/amorphous-Si core/shell sample configuration has been devised. The malleable amorphous Si shell helped inhibit brittle fracture, provide the confinement to significantly raise the stress level, and extend the plastic flow in crystalline Si core. This enabled a real-time observation of the stress-induced crystalline-to-amorphous transition (CAT) process in Si. In situ TEM compression experiment demonstrated a direct amorphization process from the single crystalline diamond cubic Si phase, owing to the accumulation of plastic strain and profuse stacking faults. Deep insights of the CAT process have been achieved from density functional theory simulations.

Highlights

  • The crystalline and amorphous phases are the two principal states of silicon, and the transformation[1,2,3,4,5,6] between them has attracted great attention

  • We demonstrate that diamond cubic Si transforms into amorphous silicon through slip-mediated generation and storage of stacking faults (SFs), without involving any intermediate crystalline phases

  • Design of electron transparent samples with confinement In a previous TEM study,[23] we found that the Si pillars fabricated with focused ion beam (FIB) under 30 kV accelerating voltage always exhibit a crystalline Si (c-Si) core/amorphous Si (a-Si) shell structure

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Summary

Introduction

The crystalline and amorphous phases are the two principal states of silicon, and the transformation[1,2,3,4,5,6] between them has attracted great attention. We refer the diamond cubic Si as Si-I phase and the β-tin Si as Si-II phase This viewpoint was further strengthened by the discontinuous loaddepth curves obtained in indentation tests.[11,15] Subsequently, Si-II phase is frequently cited as a transition state for the CAT of Si. a-Si was reported to exhibit sharp resistance change under pressure,[20] and discontinuous load-depth curves may be caused by processes other than phase transformation, for example, massive dislocation nucleation and motion and so on.[10] As such, in the absence of direct evidence, the necessity of the Si-II phase during the CAT process is uncertain, and has been challenged by several research groups.[13,14,21] In an effort to directly observe the response of c-Si to indentation, Minor et al.[22] carried out indentation tests inside TEM. We report the design of a novel core/shell sample configuration that applies confinement on the electron transparent samples, which enabled real-time visualization of deformation-induced CAT of c-Si under uniaxial compression inside TEM, as well as in situ monitoring of the Received 25 February 2016; revised 20 April 2016; accepted 5 May 2016

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