In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C

Abstract

Nanoscratching introduces detrimental surface and subsurface defects like amorphous regions, dislocations, and stacking faults in monocrystalline silicon, hindering its application in microelectronics and high-performance optics. This study leverages in-situ transmission electron microscopy to unveil the thermal evolution of these defects in atomic scale. A key finding is the amorphous phase recrystallization starting at ∼500 °C. Epitaxial growth from the crystalline-amorphous boundary, guided by adjacent crystal planes, restores the original diamond structure phase. By 700–800 °C, almost complete recrystallization occurs, maintaining similar interplanar spacing despite residual crystal distortions and dislocations. Notably, heating above 600 °C results in the gradual vanishing of stacking faults, suggesting a dynamic thermal evolution of the crystal defects induced by surface nanoscratching. This work demonstrates thermal annealing as a promising strategy to mitigate nanoscratch-induced defects, paving the way for defect-free-surface of silicon components in ultra-precision machining processes. It offers valuable insights into the interplay between nanoscratching, temperature, and defect evolution, laying the groundwork for surface and subsurface defects elimination in silicon under thermal fields.