Abstract
As a promising material for solar water splitting, p-type CuBi2O4 semiconductor has attracted much attention due to its unique advantages. However, the photoelectrochemical (PEC) activity of the CuBi2O4 is far from satisfactory due to its less efficient carrier transport. In this study, a doped method is used to prepare a layer of indium oxide on the surface of CuBi2O4, that is, a new In2O3/CuBi2O4 heterojunction thin film is prepared. We compare the performance of pure CuBi2O4 and In2O3/CuBi2O4 through electrochemical testing and several physical characterizations. The final experimental results show that indium oxide can improve the PEC properties of CuBi2O4 by reducing the recombination of electrons and holes and improve the charge transport.
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