Abstract
Several kinds of In2O3 nanowires (NWs) with different shapes and diameters were in situ synthesized from indium films with different thicknesses at a low temperature of 400°C. The NWs had screw structures, and they grew along each axial screw direction by vapor-solid growth mechanism. The thin NWs were synthesized with low indium vapor supersaturation. Two-dimensional nucleation and radial growth trends occurred when the supersaturation increased. The field emission results showed that the turn-on and threshold fields of the thick conical In2O3 NWs were lower than those of the thin ones.
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