Abstract
Diethyldithiocarbamate metal complexes [M(S2CN(Et)2)n] (M = Mg, Cu) were fabricated as precursors to deposit pure as well as copper sulfide doped-magnesium sulfide thin film on a glass substrates by Physical Vapor Deposition Technique (PVD). X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) analyses showed that obtained thin films exhibit pure cubic phase of magnesium sulfide. The formation of thin films was further confirmed by UV–vis spectra, revealing a shift of absorption peak towards lower wavelength in addition to the reduction in reflectance and enhancement in transmission. The maximum value of transmission observed in this study was 94%. Scanning Electron Micrographs reveal the formation of spherical particles exhibiting a decreasing trend of bandgap as 3.1-2.8 eV subsequent to doping. Further analysis of elemental composition Energy-Dispersive X-ray (EDX) confirmed metal sulfide deposition on the substrates with anticipated doping concentration. These complexes can be deposited as CuxMg1-xS2 thin films and would be the first in their class to be used in optoelectronic devices.
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