Abstract
In this work, in situ synchrotron X-ray diffraction reciprocal space mapping (RSM) measurements were carried out for the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN layers, which were also grown by RF-MBE on commercialized GaN/c-sapphire templates. In situ XRD RSM measurements were performed using an MBE apparatus directly coupled to an X-ray diffractometer at the beamline of the synchrotron radiation facility SPring-8. It was observed in situ that both lattice relaxation and compositional pulling occurred during the initial growth stage, reducing the strain of GaInN on GaN and InN. Different initial growth behaviors of GaInN on GaN and InN were also observed from the results of the evolution of GaInN integrated peak intensities.
Highlights
Nitride-based red light-emitting diodes (LEDs) have been desired for the fabrication of nitride-based monolithic μ-LED displays providing the three primary colors of light. [1] Nitride-based red laser diodes (LDs) have been desired to improve the poor temperature characteristics of AlGaInP-based LDs in order to fabricate laser displays [2].In current nitride-based light emitters involving LEDs and LDs, a GaN-based matrix structure withGaInN quantum wells (QWs) has been used
In situ XRD reciprocal space mapping (RSM) measurements were performed using the Molecular beam epitaxy (MBE) apparatus directly coupled to an X-ray diffractometer (Kohzu Precision Co., Ltd., Kawasaki, Japan) at beamline BL11XU of the synchrotron radiation facility SPring-8 (Hyogo, Japan) [26,27,28]
The initial growth stages in the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) growth of GaInN on GaN and InN were observed using in situ synchrotron XRD RSM
Summary
Nitride-based red light-emitting diodes (LEDs) have been desired for the fabrication of nitride-based monolithic μ-LED displays providing the three primary colors of light. [1] Nitride-based red laser diodes (LDs) have been desired to improve the poor temperature characteristics of AlGaInP-based LDs in order to fabricate laser displays [2].In current nitride-based light emitters involving LEDs and LDs, a GaN-based matrix structure withGaInN quantum wells (QWs) has been used. Nitride-based red light-emitting diodes (LEDs) have been desired for the fabrication of nitride-based monolithic μ-LED displays providing the three primary colors of light. [1] Nitride-based red laser diodes (LDs) have been desired to improve the poor temperature characteristics of AlGaInP-based LDs in order to fabricate laser displays [2]. With increasing the In content of GaInN in QWs in this structure, the increase in the spatial separation between electrons and holes and the plastic relaxation become serious problems that cannot be ignored. The former is owing to the enhancement of the quantum-confined Stark effect (QCSE) [3] due to a higher piezoelectric polarization. A Gax In1−x N-based matrix structure with
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