In-situ Synchrotron x-ray photoelectron spectroscopy study of medium-temperature baking of niobium for SRF application

Abstract

Abstract In order to determine optimal parameters of vacuum thermal processing of superconducting radiofrequency niobium cavities exhaustive information on the initial chemical state of niobium and its modification upon a vacuum heat treatment is required. In the present work the chemical composition of the niobium surface upon ultra-high vacuum baking at 200–400 °C similar to “medium-temperature baking” and “furnace baking” of cavities is explored in-situ by synchrotron X-ray photoelectron spectroscopy (XPS). Our findings imply that below the critical thickness of the Nb2O5 layer (≈ 1 nm) niobium starts to interact actively with surface impurities, such as carbon and phosphorus. By studying the kinetics of the native oxide reduction, the activation energy and the rate-constant relation have been determined and used for the calculation of the oxygen-concentration depth profiles. It has been established that the controlled diffusion of oxygen is realized at temperatures 200–300 °C, and the native-oxide layer represents an oxygen source, while at 400 °C the pentoxide is completely reduced and the doping level is determined by an ambient oxygen partial pressure. Fluorine (F to Nb atomic ratio is 0.2) after the buffered chemical polishing was found to be incorporated into the surface layer probed by XPS (≈ 4.6 nm), and its concentration increased during the low-temperature baking (F/Nb=0.35 at 230 °C) and depleted at higher temperatures (F/Nb=0.11 at 400 °C). Thus, the influence of fluorine on the performance of mid-T baked, nitrogen-doped and particularly mild-baked (120 °C/48 h) cavities must be considered. The possible role of fluorine in the educed Nb+5 → Nb+4 reaction under the impact of an X-ray beam at room temperature and during the thermal treatment is also discussed. The range of temperature and duration parameters of the thermal treatment at which the niobium surface would not be contaminated with impurities is determined.