Abstract
K2CsSb is a promising photocathode candidate to serve as an electron source in next-generation light sources such as Free Electron Lasers (FEL) and Energy Recovery Linacs (ERL). As the traditional recipe for creation of K2CsSb photocathodes typically results in a rough surface that deteriorates electron beam quality, significant effort has been made to explore novel growth methods for K2CsSb photocathodes. In this paper, a method of ternary co-evaporation of K, Cs, and Sb is described. By using in-situ synchrotron X-ray techniques, the quality of the photocathode is characterized during and after the growth. K2CsSb photocathodes grown by this method on Si (100) and MgO (001) substrates show strong (222) texture, and the two photocathodes exhibit 1.7% and 3.4% quantum efficiencies at a wavelength of 530 nm, with a rms surface roughness of about 2–4 nm. This represents an order of magnitude reduction in roughness compared to typical sequential deposition and should result in a significant improvement in the brightness of the generated electron beam.
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