Abstract
Amorphous CuInSe2 films were deposited by rf-magnetron sputtering onto soda-lime glass and silicon substrates. Some were treated with an InCl3 solution. The films were annealed in a nitrogen environment and studied using in-situ high-temperature x-ray diffraction. CuInSe2 recrystallization began at ∼x223C270 °C and all samples showed increasing crystallinity up to ∼x223C380 °C. The onset and completion temperatures for crystallization varied minimally between samples. The as-deposited films (no InCl3) showed CuSe phase formation at intermediate temperatures (180–250 °C). Na2O from the soda-lime glass increased net rate of crystallization. InCl3 resulted in an even greater increase to crystallization rate and largely improved the final crystalline quality.
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