Abstract
Stress development and relaxation are important issues for the reliability of integrated circuits. In this article we report on the stress evolution during solid state reaction, which occurs in Ti/Al bilayers. Whereas the formation of TiAl 3 is expected to induce large tensile stress because of a global volume decrease of 6–8%, our in-situ X-ray diffraction measurements during annealing at 465 °C indicate the formation of a compressive compound. Furthermore, an increase in the lattice parameter of Ti is evidenced by X-ray diffraction. A plausible explanation for this expansion is the incorporation of O in solution from a reaction with the underlying SiO 2 layer.
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