Abstract
The influence of electron radiation on the properties of semiconducting silicon single crystals (Si)—both n- and p-types (currently one of the most widely applied material in the electronic technology) was studied under the electron irradiation process in-situ in air (in common conditions). Higher value of electro-conductivity (σ) during the irradiation process with respect to after irradiation was observed, which was explained by ionization and capture mechanisms resulting in the formation of non-equilibrium carriers (hole-electron pairs). The kinetics of radiation defects generation, their physical nature, temperature stability and relaxation are examined. Structural radiation defects formation: point and complexes, their influence on the silicon conductivity are considered.
Highlights
There are numerous investigations concerning the influence of irradiations on the properties of solid states which are carried out before and after irradiation [for example 1-14]
Conductivity, mobility and carrier concentration were measured by Hall Effect equipment having following parameters: magnetic field induction 0.3 Tesla; Hall-potential and contact differential voltage were measured by voltmeter B7-34A (Russian production) with input impedance of 2 × 1010 Ω and accuracy of 5%
For n-single crystals (Si) the inflection point on the logσ curve is located at the 4 × 1014 el/cm2, while for p-Si this point is located at the 1.5 × 1015 el/cm2
Summary
There are numerous investigations concerning the influence of irradiations on the properties of solid states (including silicon) which are carried out before and after irradiation [for example 1-14]. In present study silicon conductivity (the main property for practical usage) measurements are carried out directly under the electron irradiation process.
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