Abstract
By first growing NiSi 2 precipitates in amorphous Si(a-Si) and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at the a-Si/NiSi 2 precipitate interface. We confirm our previous results regarding the existence of two, totally different mechanisms above and below 450°C. Interface roughening, leading to practically isotropic growth, was shown to prevail in the lower temperature range. We present a detailed analysis of the growth process at 500°C, via in situ transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) which demonstrates that Si crystallization is then Ni silicide-mediated, leading to planar growth.
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