In Situ Study of ALD Processes Using Synchrotron-based X-ray Fluorescence and Scattering Techniques

Abstract

In this paper, we present an x-ray based approach for in situ characterization during ALD processes. In a first case study the growth of HfO2 on H-terminated and oxidized Si and Ge surfaces is studied. X-ray fluorescence (XRF) is used to monitor the amount of deposited Hf atoms, while grazing incidence small angle x-ray scattering (GISAXS) provides information on the evolution of surface roughness. A second case study concerns the growth of TiO2 in a porous titania film containing ink-bottle mesopores. XRF and GISAXS measurements are used to monitor the Ti uptake and the density of the porous film, respectively.