In Situ Studies on Reaction Mechanisms in Atomic Layer Deposition

Abstract

During the past decade, atomic layer deposition (ALD) has become an important thin-film deposition method in microelectronics industry, and it has also gained a lot of interest in many other areas, such as nanotechnology. The success of ALD is built on proper surface reactions. In this paper, in situ reaction mechanism studies on ALD processes are reviewed with the aim of building a general understanding on similarities and differences exhibited by various processes and process groups. Also, levels of understanding reaction mechanisms in ALD are discussed. The main methods used to study ALD chemistry in situ under typical process conditions are quadrupole mass spectrometry (QMS), quartz crystal microbalance (QCM), and infrared (IR) spectrometry. These are presented in detail in the review. Various other optical methods, ellipsometry in particular, have been used to study ALD processes too, but they provide little information about the reaction mechanisms. Competent in situ investigations solve the ALD reaction mechanism as balanced equations for the ALD half-reactions. The majority of ALD processes are exploiting ligand exchange reactions, where the ligands of the metal precursor are eliminated by bonding to the Lewis acids of the nonmetal precursors, most commonly hydrogen. These volatile byproducts are usually released during both precursor pulses, and determining their relative amounts is the important task in reaction mechanism studies of such processes. These processes are mechanistically fairly well understood, though some of these also display side-reactions to the ligand exchange reactions. There are also whole groups of processes that are using chemistry almost entirely different from the ligand exchange reactions. The most important such processes involve combustion chemistry, with oxygen, oxygen plasma, or ozone as a precursor or co-reactant. The mechanisms of these processes are complicated and less understood compared with the mechanisms of the ligand exchange reaction processes.