Abstract
Magnesium stannate spinel (Mg 2SnO 4) was synthesized through conventional solid state processing and then irradiated with 1.0 MeV Kr 2+ ions at low temperatures 50 and 150 K. Structural evolutions during irradiation were monitored and recorded through bright field images and selected-area electron diffraction patterns using in situ transmission electron microscopy. The amorphization of Mg 2SnO 4 was achieved at an ion dose of 5 × 10 19 Kr ions/m 2 at 50 K and 10 20 Kr ions/m 2 at 150 K, which is equivalent to an atomic displacement damage of 5.5 and 11.0 dpa, respectively. The spinel crystal structure was thermally recovered at room temperature from the amorphous phase caused by irradiation at 50 K. The calculated electronic and nuclear stopping powers suggest that the radiation damage caused by 1 MeV Kr 2+ ions in Mg 2SnO 4 is mainly due to atomic displacement induced defect accumulation. The radiation tolerance of Mg 2SnO 4 was finally compared with normal spinel MgAl 2O 4.
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