Abstract
The capability of reflection electron microscopy (REM) to characterize surface structures is applied to in situ studies of fast atom bombardment (FAB) and annealing process. A FAB gun (4–6 kV Ar) is attached to a UHV electron microscope. Heat cleaned Pt(111) and Si(111) surfaces are bombarded. Low temperature bombardment produces defects on surfaces and they mask images of surface atomic steps. Higher temperature annealing is required to get atomically flat surfaces for a longer time bombardment. In cases of high temperature bombardment, sputtering and annealing take place simultaneously and surface atomic steps move as a result of the sputtering.
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