Abstract
ABSTRACTThe interaction of ethene with silicon (111) surfaces at different process temperatures (580°C, 680°C, 780°C) was monitored in situ by spectroscopic ellipsometry. It is shown that spectroscopic ellipsometry is a reliable method to monitor the carbonization process of silicon surfaces. Different SiC formation stages (incubation time, (√3×√3)R30° reconstruction, 2D growth and 3D growth) were observed using complimentary analyzing techniques. The change of the ellipsometric signal as a function of process time is related to these stages and was interpreted using an optical model which consists of four layers (surface roughness, SiC layer, interface layer, Si substrate).
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