Abstract
In-situ plasma characterization was performed in industrial equipment using 300-mm PlasmaTemp and PlasmaVolt sensor wafers from OnWafer/KLA-Tencor. It was shown that the local characteristics of RF voltage collected with 7 detectors provide additional information to the generally used power and DC Bias readouts. Thus, the magnitude of the RF voltage as well as the noise level were shown to be influenced by the temperature of the dual zone chuck in TCP reactor, demonstrating a higher level of both at high temperature. Dependence of the RF voltage on pressure was studied in both CCP and TCP reactors, showing an increase of the RF voltage with pressure for CCP and the opposite trend for TCP. Finally, a simple description of the experimental data was proposed based on the equivalent scheme of plasma reactor and on the dominating part of a plasma impedance.
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