Abstract
As an alternative method of the electron transport layer (ETL) of Zinc Oxide nanoparticles, an in-situ solution process was developed to prepare ZnO thin films for manufacturing perovskite light-emitting diodes (PeLEDs). After optimizing the processing conditions, the band energy and electron mobility are adjusted appropriately, which shows advantages to balance the carrier injection in PeLEDs. The near-infrared PeLEDs with ZnO film prepared by in-situ method demonstrated external quantum efficiency of 22%, which is compatible with their counterpart using ZnO nanoparticles. Our report provides a feasible strategy for the low-cost fabrication of PeLEDs with high performance.
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